Methods for forming a lanthanum-metal oxide dielectric layer

Details Methods for forming a lanthanum-metal oxide dielectric layer Methods for forming a lanthanum-metal oxide dielectric layer

2004-08-31

2009-02-24

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S783000

Reexamination Certificate

active

07494939

ABSTRACT:
Atomic layer deposited lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed by depositing aluminum and lanthanum by atomic layer deposition onto a substrate surface in which precursors to deposit the lanthanum include a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor.

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