Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-08-31
2009-02-24
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S783000
Reexamination Certificate
active
07494939
ABSTRACT:
Atomic layer deposited lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed by depositing aluminum and lanthanum by atomic layer deposition onto a substrate surface in which precursors to deposit the lanthanum include a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor.
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pa
Ahn Kie Y.
Forbes Leonard
Duong Khanh B
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Smith Zandra
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