Methods for forming a field effect transistor

Details Methods for forming a field effect transistor Methods for forming a field effect transistor

2008-07-22

2008-07-22

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S528000, C438S595000, C257SE21335, C257SE21634, C257SE21635

Reexamination Certificate

active

07402484

ABSTRACT:
Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.

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