Methods for fabricating solid state image sensor devices...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S197000, C438S075000, C438S706000, C257SE21170, C257SE21370, C257SE21189, C257SE21352, C257SE27133, C257SE27134

Reexamination Certificate

active

11211840

ABSTRACT:
Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current.

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patent: 2006/0081887 (2006-04-01), Lyu

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