Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-29
2008-04-29
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S075000, C438S706000, C257SE21170, C257SE21370, C257SE21189, C257SE21352, C257SE27133, C257SE27134
Reexamination Certificate
active
11211840
ABSTRACT:
Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current.
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F. Chau & Associates LLC
Nhu David
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