Methods for fabricating semiconductor devices

Details Methods for fabricating semiconductor devices Methods for fabricating semiconductor devices

2007-06-26

2007-06-26

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000, C438S527000, C438S530000

Reexamination Certificate

active

11010157

ABSTRACT:
Methods for stabilizing a threshold voltage in an NMOS transistor are disclosed. A disclosed method comprises: forming a gate electrode on an active region in a substrate of a first conductive type; implanting ions of a second conductive type into the active region to form LDD regions; forming spacers on the sidewalls of the gate electrode; implanting ions of the second conductive type into the active region to form second source/drain regions; implanting halo ions into the active region; activating ions in the source/drain regions by conducting a first thermal process; and moving the halo ions toward the surface of the channel under the gate electrode by conducting a second thermal process.

REFERENCES:
patent: 6194278 (2001-02-01), Rengarajan
patent: 6362054 (2002-03-01), Choi et al.
patent: 6518136 (2003-02-01), Lee et al.
patent: 6548842 (2003-04-01), Bulucea et al.
patent: 6579751 (2003-06-01), Tran
patent: 6589847 (2003-07-01), Kadosh et al.
patent: 2003/0148564 (2003-08-01), Chang

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