Methods for fabricating semiconductor devices

Details Methods for fabricating semiconductor devices Methods for fabricating semiconductor devices

2006-02-28

2006-02-28

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S258000, C438S261000, C438S270000, C257S330000, C257S332000

Reexamination Certificate

active

07005348

ABSTRACT:
Methods for fabricating semiconductor devices are disclosed. An illustrated method includes: etching a semiconductor substrate to form a trench, forming an ONO film on the semiconductor substrate, removing the ONO film from the upper surface of the semiconductor substrate while leaving the ONO film on an inside wall surface of the trench, forming a gate oxide film on the semiconductor substrate adjacent the ONO film, depositing polysilicon on the semiconductor substrate, and selectively removing the polysilicon to form SONOS gate electrodes on the gate oxide film and the trench, respectively. Because opposite sides of the polysilicon gate electrode are covered with an ONO layer, the size of the nitride film may be substantially maximized.

REFERENCES:
patent: 6794249 (2004-09-01), Palm et al.
patent: 6888755 (2005-05-01), Harari
patent: 6927134 (2005-08-01), Mo et al.
patent: 6936887 (2005-08-01), Harari et al.
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2005/0077566 (2005-04-01), Zheng et al.

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