Methods for fabricating nonvolatile memory device

Details Methods for fabricating nonvolatile memory device Methods for fabricating nonvolatile memory device

2006-10-24

2006-10-24

Lindsay, Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S257000

Reexamination Certificate

active

07125771

ABSTRACT:
Methods of fabricating a nonvolatile memory device are disclosed. A disclosed method comprises forming a first buffer oxide layer and a first buffer nitride layer on a semiconductor substrate; forming an opening through the first buffer nitride layer and the first buffer oxide layer; forming sidewall floating gates on sidewalls within the opening; forming a block oxide layer; forming a polysilicon main gate over the sidewall floating gates; forming first sidewall spacers on the sidewalls of the polysilicon main gate and the sidewall floating gates; forming common source and drain regions in the semiconductor substrate; filling the gap between the polysilicon main gates with an insulating layer; depositing a polysilicon layer for a word line; patterning a word line and the polysilicon main gate in the direction of a word line; and forming second sidewall spacers on the sidewalls of the word line and the polysilicon main gate.

REFERENCES:
patent: 6093945 (2000-07-01), Yang
patent: 6130132 (2000-10-01), Hsieh et al.
patent: 6197639 (2001-03-01), Lee et al.
patent: 6573557 (2003-06-01), Watanabe
patent: 6635532 (2003-10-01), Song et al.
patent: 6737322 (2004-05-01), Inoue et al.
patent: 6798015 (2004-09-01), Kasuya
patent: 2002/0145914 (2002-10-01), Ogura et al.
patent: 2003/0166320 (2003-09-01), Kasuya
patent: 2003/0235952 (2003-12-01), Shibata
Copy of German Office Action mailed on Mar. 9, 2006 in counterpart German Patent Application No. 10 2004 063 609.5-33.

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