Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-04-30
2011-12-13
Dang, Phuc (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S269000, C438S369000, C257S288000, C257S369000
Reexamination Certificate
active
08076209
ABSTRACT:
Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, etching recesses into the substrate using the gate electrode as an etch mask, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.
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International Search Report for PCT/US2009/058629 mailed Feb. 22, 2010.
Hargrove Michael J.
Pal Rohit
Yang Frank Bin
Advanced Micro Devices , Inc.
Dang Phuc
Ingrassia Fisher & Lorenz P.C.
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