Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S305000, C438S519000
Reexamination Certificate
active
07122417
ABSTRACT:
Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is fabricated by forming gate spacers on both sidewalls of a gate pattern in a semiconductor substrate including first and second regions. Then, a first impurity region is formed in the semiconductor substrate at the first region, and the gate spacer exposed at the first region is removed. A second impurity region is formed in the semiconductor substrate at the first region. A third impurity region is formed at the semiconductor substrate in the second region, and the gate spacer exposed at the second region is removed. A fourth impurity region is formed in the semiconductor substrate at the second region. The first and third impurity regions are formed deeper than the second and fourth impurity regions.
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Doty Heather
Schillinger Laura M.
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