Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-07
1998-06-09
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 24, 438749, 438970, H01L 2129
Patent
active
057633231
ABSTRACT:
A method for fabricating an integrated circuit device includes the steps of forming an insulating layer on a substrate and forming a plurality of parallel conductive lines on the insulating layer. An etch barrier is formed on each of the parallel conductive lines, and contact holes are formed between the etch barriers. The contact holes expose portions of the substrate without exposing the plurality of parallel conductive lines. In particular, the contact holes can be formed by forming a patterned mask layer on the insulating layer and etch barriers, and etching exposed portions of the insulating layer. The patterned mask layer selectively exposes a plurality of parallel strips orthogonal to the plurality of parallel conductive lines. Related structures are also discussed.
REFERENCES:
patent: 5292684 (1994-03-01), Chung et al.
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5565372 (1996-10-01), Kim
patent: 5567989 (1996-10-01), Sim
patent: 5589413 (1996-12-01), Sung et al.
Kim Do-hyung
Lee Joo-young
Park Young-so
Bilodeau Thomas G.
Niebling John
Samsung Electronics Co,. Ltd.
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