Methods for fabricating dual material gate in a...

Details Methods for fabricating dual material gate in a... Methods for fabricating dual material gate in a...

2008-04-10

2009-12-22

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S009000, C438S238000, C438S381000, C438S742000, C257SE21170, C257SE21304, C257SE21311, C257SE21585, C257SE21646

Reexamination Certificate

active

07635648

ABSTRACT:
A method for fabricating dual material gate structures in a device is provided. The dual material gate structures have different gate electrode materials in different regions of the device. In one embodiment, the method includes providing a substrate having a patterned first gate electrode and a patterned first gate dielectric layer disposed on the substrate, removing a portion of the first gate electrode from the substrate to define a trench on the substrate, and filling the trench to form a second gate electrode.

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