Methods for fabricating a semiconductor device on an SOI...

Details Methods for fabricating a semiconductor device on an SOI... Methods for fabricating a semiconductor device on an SOI...

2006-08-28

2008-12-16

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S218000, C438S222000, C438S232000, C438S403000, C438S424000, C257SE21642

Reexamination Certificate

active

07465623

ABSTRACT:
Methods are provided for fabricating an SOI component on a semiconductor layer/insulator/substrate structure including a diode region formed in the substrate. The method comprises, in accordance with one embodiment, forming a shallow trench isolation (STI) region extending through the semiconductor layer to the insulator. A layer of polycrystalline silicon is deposited overlying the STI and the semiconductor layer and is patterned to form a polycrystalline silicon mask comprising at least a first mask region and a second mask region. First and second openings are etched through the STI and the insulator using the mask as an etch mask. N- and P-type ions are implanted into the diode region through the openings to form the anode and cathode of the diode. The anode and cathode are closely spaced and precisely aligned to each other by the polycrystalline silicon mask. Electrical contacts are made to the anode and cathode.

REFERENCES:
patent: 6465283 (2002-10-01), Chang et al.
patent: 6686233 (2004-02-01), Soderbarg et al.
patent: 6900101 (2005-05-01), Lin
patent: 2005/0059177 (2005-03-01), Rhodes
patent: 2005/0148131 (2005-07-01), Brask
patent: 2006/0292782 (2006-12-01), Nomura et al.

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