Methods for fabricating a copper interconnect

Details Methods for fabricating a copper interconnect Methods for fabricating a copper interconnect

2007-07-24

2007-07-24

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

10925078

ABSTRACT:
Methods for fabricating a copper interconnect are disclosed. A disclosed method comprises: employing a damascene process to form a first trench in a first insulating layer; depositing a first barrier layer and a first copper layer on the first insulating layer; forming a bottom copper interconnect by planarizing the first copper layer; depositing and planarizing a second barrier layer; depositing a second insulating layer; forming a via hole in the second insulating layer; employing a damascene process to form a second trench in the second insulating layer; and forming a via and an upper copper interconnect by depositing a third barrier layer and a second copper layer on the second insulating layer.

REFERENCES:
patent: 6100161 (2000-08-01), Yu et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6329234 (2001-12-01), Ma et al.

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