Methods for fabricating a capacitor

Details Methods for fabricating a capacitor Methods for fabricating a capacitor

2006-07-11

2008-07-29

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000, C257S309000, C257S068000, C257SE27092, C257SE29346

Reexamination Certificate

active

07405122

ABSTRACT:
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mask layer is patterned to form a patterned second mask layer in a predetermined region for formation of a capacitor. A plurality of hemispherical grain structures are formed on a sidewall of the patterned second mask layer. The first mask layer is etched by using the hemispherical grain structures and the patterned second mask layer as a mask, thereby forming a patterned first mask layer having a pattern. The pattern of the first mask layer is transferred to the bottom electrode material layer. And, a capacitor dielectric layer and a top electrode layer are formed on the bottom electrode material layer to form the capacitor.

REFERENCES:
patent: 6300192 (2001-10-01), Kim
patent: 2005/0095778 (2005-05-01), Dong et al.
patent: 2005/0130076 (2005-06-01), Zhuang
patent: 2005/0142869 (2005-06-01), Lee
patent: 2005/0247967 (2005-11-01), Green et al.
patent: 410440 (2000-11-01), None
patent: 502374 (2002-09-01), None

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