Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-07-12
2011-07-12
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S698000, C257SE21252, C257SE21256
Reexamination Certificate
active
07977245
ABSTRACT:
Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing H2gas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.
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Delgadino Gerardo A.
Schneider Karsten
Xiao Ying
Applied Materials Inc.
Landau Matthew C
McCall Shepard Sonya D
Patterson & Sheridan L.L.P.
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