Methods for depositing high-K dielectrics

Details Methods for depositing high-K dielectrics Methods for depositing high-K dielectrics

2011-04-19

2011-04-19

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C438S396000, C257SE21010

Reexamination Certificate

active

07927947

ABSTRACT:
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

REFERENCES:
patent: 7002788 (2006-02-01), Jeong et al.
patent: 7125767 (2006-10-01), Jeong et al.
patent: 7629608 (2009-12-01), Honda
patent: 2005/0152094 (2005-07-01), Jeong et al.
patent: 2006/0094185 (2006-05-01), Jeong et al.
patent: 2007/0221945 (2007-09-01), Honda
patent: 2009/0065896 (2009-03-01), Hwang

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