Methods for depositing amorphous materials and using them as...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer

Reexamination Certificate

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C438S486000, C438S404000

Reexamination Certificate

active

07029995

ABSTRACT:
Methods for forming epitaxial films involve forming a buffer layer on a single crystal substrate, depositing an amorphous layer on the buffer layer, then forming an epitaxial film from the amorphous layer by solid phase epitaxy.

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patent: 2004/0221792 (2004-11-01), Forbes

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