Methods for controlling and reducing profile variation in...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S313000, C430S317000, C216S037000, C216S067000, C438S694000, C438S695000

Reexamination Certificate

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07018780

ABSTRACT:
A method for controlling a removal of photoresist material from a semiconductor substrate is provided. The method includes providing the semiconductor substrate having a photoresist mask formed thereon. The method also includes forming a conformal layer of polymer over the photoresist mask and a portion of the semiconductor substrate not covered by the photoresist mask while concurrently removing a portion of the conformal layer of polymer. The thickness of the conformal layer of polymer on each region of the semiconductor substrate is set to vary depending on a removal rate of the conformal layer of polymer in each region of the semiconductor substrate.

REFERENCES:
patent: 6316169 (2001-11-01), Vahedi et al.
patent: 6372634 (2002-04-01), Qiao et al.
patent: 6653058 (2003-11-01), Vahedi et al.
patent: 6670265 (2003-12-01), Wang et al.

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