Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S722000
Reexamination Certificate
active
10993031
ABSTRACT:
A method for processing a semiconductor topography which includes removing metal oxide layers from the bottom of contact openings is provided. In some embodiments, the method may include etching openings within a dielectric layer to expose conductive and silicon surfaces within the semiconductor topography is provided. In such cases, the method further includes exposing the semiconductor topography to an etch process adapted to remove metal oxide material from the conductive surfaces without substantially removing material from the silicon surfaces. In some cases, the etch chemistry used for the etch process may include sulfuric acid. In addition or alternatively, the etch chemistry may include hydrogen peroxide. In any case, the etch chemistry may be distinct from chemistries used to remove residual matter generated from the etch process used to form the openings within the dielectric and/or the removal of the masking layer used to pattern the openings.
REFERENCES:
patent: 6174766 (2001-01-01), Hayashi et al.
patent: 6878646 (2005-04-01), Tsai et al.
patent: 2004/0038530 (2004-02-01), Shin et al.
Krishna Vinay
Yang Chan-Lon
Zhang Jie
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Lettang Mollie E.
Tsai H. Jey
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