Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2011-04-19
2011-04-19
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S182000, C365S185010, C365S177000, C365S185260, C365S183000
Reexamination Certificate
active
07929343
ABSTRACT:
Methods, devices, and systems are disclosed relating to a memory cell having a floating body. A memory cell includes a transistor comprising a drain and a source each formed in silicon and a gate positioned between the drain and the source. The memory cell may further include a bias gate recessed into the silicon and positioned between an isolation region and the transistor. In addition, the bias gate may be configured to be operably coupled to a bias voltage. The memory cell may also include a floating body within the silicon. The floating body may include a first portion adjacent the source and the drain and vertically offset from the bias gate and a second portion coupled to the first portion. Moreover, the bias gate may be formed adjacent to the second portion.
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Le Thong Q
Micro)n Technology, Inc.
TraskBritt
LandOfFree
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