Methods and systems for optimizing ion implantation...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492100, C250S492200, C250S492300, C250S397000, C250S3960ML

Reexamination Certificate

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10740654

ABSTRACT:
An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substantially parallel ion beam trajectories towards the workpiece, and an ion beam detector for measuring the ion beam current of the parallel ion beam trajectories as a function of the position of the ion beam detector. A uniformity controller filters the ion beam current measured by the ion beam detector to at least one predetermined resolution range and generates a uniformity signal to the beam scanning mechanism in response to the filtered ion beam current so that the workpiece is uniformly implanted. The uniformity controller determines a controllable frequency range for optimizing ion implantation uniformity control by making controllable frequencies observable and uncontrollable frequencies unobservable. As a result, the uniformity controller observes and controls spacially distributed components of the profiled beam current for optimizing the implantation of doses to the workpiece in a time and cost efficient manner.

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