Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-10-25
2005-10-25
Versteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192230
Reexamination Certificate
active
06958112
ABSTRACT:
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
REFERENCES:
patent: 4572841 (1986-02-01), Kaganowicz et al.
patent: 4690746 (1987-09-01), McInerney et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4890575 (1990-01-01), Ito et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5156881 (1992-10-01), Okano et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5362526 (1994-11-01), Wang et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5525550 (1996-06-01), Kato
patent: 5571576 (1996-11-01), Qian et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5599740 (1997-02-01), Jang et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5621241 (1997-04-01), Jain
patent: 5624582 (1997-04-01), Cain
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5645645 (1997-07-01), Zhang et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5776557 (1998-07-01), Okano et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5804259 (1998-09-01), Robles
patent: 5807785 (1998-09-01), Ravi
patent: 5849455 (1998-12-01), Ueda et al.
patent: 5850105 (1998-12-01), Dawson et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869149 (1999-02-01), Denison et al.
patent: 5872052 (1999-02-01), Iyer
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874350 (1999-02-01), Nakagawa
patent: 5903106 (1999-05-01), Young et al.
patent: 5910342 (1999-06-01), Hirooka et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5915190 (1999-06-01), Pirkle
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5968610 (1999-10-01), Liu et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 5990000 (1999-11-01), Hong et al.
patent: 5990013 (1999-11-01), Berenguer et al.
patent: 6013191 (2000-01-01), Nasser-Faili et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6030666 (2000-02-01), Lam et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6039851 (2000-03-01), Iyer
patent: 6042901 (2000-03-01), Denison et al.
patent: 6059643 (2000-05-01), Hu et al.
patent: 6070551 (2000-06-01), Li et al.
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6074959 (2000-06-01), Wang et al.
patent: 6077786 (2000-06-01), Chakravarti et al.
patent: 6096646 (2000-08-01), Lee et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6149976 (2000-11-01), Matsuki et al.
patent: 6149986 (2000-11-01), Shibata et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6174808 (2001-01-01), Jang et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6189483 (2001-02-01), Ishikawa et al.
patent: 6190233 (2001-02-01), Hong et al.
patent: 6191026 (2001-02-01), Rana et al.
patent: 6194037 (2001-02-01), Terasaki et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6203863 (2001-03-01), Liu et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6224950 (2001-05-01), Hirata
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6230650 (2001-05-01), Yamazaki
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6313010 (2001-11-01), Nag et al.
patent: 6326064 (2001-12-01), Denison et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6346302 (2002-02-01), Kishimoto et al.
patent: 6372291 (2002-04-01), Hua et al.
patent: 6376391 (2002-04-01), Olson et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6413886 (2002-07-01), Kersch et al.
patent: 6416823 (2002-07-01), Li et al.
patent: 6465044 (2002-10-01), Jain et al.
patent: 6503843 (2003-01-01), Xia et al.
patent: 6531193 (2003-03-01), Fonash et al.
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6559026 (2003-05-01), Rossman et al.
patent: 6589610 (2003-07-01), Li et al.
patent: 6589611 (2003-07-01), Li et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6607983 (2003-08-01), Chun et al.
patent: 6626188 (2003-09-01), Fitzsimmons et al.
patent: 6653203 (2003-11-01), Huang et al.
patent: 6673722 (2004-01-01), Yamazaki
patent: 6713390 (2004-03-01), M'Saad et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0033900 (2001-10-01), M'Saad et al.
patent: 2002/0192396 (2002-12-01), Wang et al.
patent: 2003/0056900 (2003-03-01), Li et al.
patent: 2003/0159656 (2003-08-01), Tan et al.
patent: 2003/0203637 (2003-10-01), Hua et al.
patent: 2003/0219540 (2003-11-01), Law et al.
patent: 2004/0146661 (2004-07-01), Kapoor et al.
patent: 2 267 291 (1993-12-01), None
patent: 2-58836 (1990-02-01), None
patent: 7-161703 (1995-06-01), None
Abraham, “Reactive Facet Tapering of Plasma Oxide For Multilevel Interconnect Applications,” VMIC Conference. pp. 115-121 (1987).
Lee et al., “Dielectric Planarization Techniques For Narrow Pitch Multilevel Interconnects,” VMIC Conference, pp. 85-92 (1987).
Meeks et al., “Modeling of SiO2deposition in high density plasma reactors and comparisons of model predictions with experimental measurements,”J. Vac. Sci. Technol. A.16(2):544-563 (1998).
Musaka, “Single Step Gap Filling Technology fo Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O2 Chemical Vapor Deposition System,” International Conference on Solid State Devices and Materials pp. 510-512, held in Japan, (1993).
Nalwa, H.S.,Handbook of Low and High Dielectric Constant Materials and Their Applications, vol. 1, p. 66 (1999).
Nguyen, s.v., “High-Density Plasma Chemical Vapor Deposition of Silicon-Based Dielectric Films for Integrated Circuits,”Journal of Research and Development, vol. 43, ½(1999).
Qian et al., “High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films,” DUMIC Conference, pp. 50-56, held in California (1995).
Vassiliev et al., “Trends in Void-Free Pre-Metal CVD Dielectrics,”Solid State Technology, pp. 129-136 (Mar. 2001).
U.S. Appl. No. 09/854,083.
Alonso, J.C. et al., “High rate-low temperature deposition of silicon dioxide films . . . ” JVST A 13(6) Nov./Dec. 1995, pp. 2924-2929.
Bar-Ilan et al., “A comparative study of sub-micron gap filling and planarization techniques”, SPIE vol. 2636, Oct. 1995, . 277-288.
Broomfield et al., “HDP Dielectric BEOL Gapfill: A Process for Manufacturing”, IEEE/SEMI Advanced Semiconductor Manufacturing Conference 1996, pp. 255-258.
Conti et al., “Processing methods to fill High aspect ratio gaps without premature constriction,” DUMIC Conference, Feb. 8-9, 1999, pp. 201-209.
Horiike et al., “High rate and highly selective Si02 etching employing inductively coupled plasma and discussion on reaction kinetics
Karim M. Ziaul
Moghadam Farhad K.
Salimian Siamak
Applied Materials Inc.
Townsend and Townsend & Crew
Versteeg Steven
LandOfFree
Methods and systems for high-aspect-ratio gapfill using... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and systems for high-aspect-ratio gapfill using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and systems for high-aspect-ratio gapfill using... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3492539