Methods and systems for forming at least one dielectric layer

Details Methods and systems for forming at least one dielectric layer Methods and systems for forming at least one dielectric layer

2011-01-18

2011-01-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S758000, C438S761000, C438S763000, C257SE21249, C257SE21293

Reexamination Certificate

active

07871926

ABSTRACT:
A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.

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