Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1998-09-11
2000-09-05
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365 65, G11C 1122
Patent
active
061152811
ABSTRACT:
A ferroelectric memory cell integrated with silicon circuitry which require a forming-gas anneal of the silicon circuitry after the ferroelectric stack has been formed. The ferroelectric layer may have a composition such that there is no space in the lattice of the ferroelectric phase to accommodate atomic hydrogen or have a composition with a Curie temperature below the temperature of the forming-gas anneal. Preferably, there is no upper platinum electrode, or it is deposited after the forming-gas anneal. A metal-oxide upper electrode serves as barrier to the forming-gas anneal, and an intermetallic layer positioned above the ferroelectric stack serves as an even better barrier. Forming-gas damage to the ferroelectric stack can be removed by a recovery anneal in a hydrogen-free environment, preferably performed at a temperature above the Curie temperature.
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Kushida-Abdelghafar et al., "Electrode-induced degradation of Pb(ZrxTi1-x)03 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors," Applied Physics Letters, vol. 69, No. 21, 1996, pp. 3188-3190.
Shimamoto et al., "H2 damage of ferroelectric Pb(Zr, Ti)03 thin-film capacitors --The role of catalytic and adsorptive activity of the top electrode," Applied Physics Letters, vol. 70, No. 23, 1997, pp. 3096, 3097.
Han et al., "Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)03 and SrBi2Ta209 thin films," Applied Physics Letters, vol. 71, No. 9, 1997, pp. 1267-1269.
Aggarwal Sanjeev
Perusse Scott Robert
Ramesh Ramamoorthy
Fears Terrell W.
Hey David A.
Telcordia Technologies Inc.
University of Maryland
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