Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-19
2010-12-14
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S153000, C438S154000, C438S164000, C257S347000
Reexamination Certificate
active
07851276
ABSTRACT:
A semiconductor device includes an insulator layer, a semiconductor layer, a first transistor, and a second transistor. The semiconductor layer is overlying the insulator layer. A first portion of the semiconductor layer has a first thickness. A second portion of the semiconductor layer has a second thickness. The second thickness is larger than the first thickness. The first transistor has a first active region formed from the first portion of the semiconductor layer. The second transistor has a second active region formed from the second portion of the semiconductor layer. The first transistor may be a planar transistor and the second transistor may be a multiple-gate transistor, for example.
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Hu Chenming
Yang Fu-Liang
Yeo Yee-Chia
Doan Theresa T
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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