Methods and structures for planar and multiple-gate...

Details Methods and structures for planar and multiple-gate... Methods and structures for planar and multiple-gate...

2007-02-20

2007-02-20

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

10823158

ABSTRACT:
A semiconductor device includes an insulator layer, a semiconductor layer, a first transistor, and a second transistor. The semiconductor layer is overlying the insulator layer. A first portion of the semiconductor layer has a first thickness. A second portion of the semiconductor layer has a second thickness. The second thickness is larger than the first thickness. The first transistor has a first active region formed from the first portion of the semiconductor layer. The second transistor has a second active region formed from the second portion of the semiconductor layer. The first transistor may be a planar transistor and the second transistor may be a multiple-gate transistor, for example.

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Shahidi, G.G., “SOI Technology for the GHz Era,” IBM J. Res. & Dev., vol. 46, No. 2/3 (Mar./May 2002) pp. 121-131.

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