Methods and etchants for etching oxides of silicon with low sele

Details Methods and etchants for etching oxides of silicon with low sele Methods and etchants for etching oxides of silicon with low sele

1996-02-15

1997-11-11

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 1566571, 1566621, 437228, 437240, 252 791, 134 13, H01L 21311

Patent

active

056859511

ABSTRACT:
A surface having exposed doped silicon dioxide such as BPSG is cleaned with a vapor phase solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning vapor phase solutions include about 1% water, about 5% hydrogen fluoride, and about 5% ammonia. The vapor phase solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning vapor phase solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 500 PPMV water, about 2% hydrogen fluoride, and about 2% ammonia is most preferred.

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Watanabe et al "Selective Etching of Phosphosilicate Glass with Low Pressure Vapor HF": J. Electrochem. Soc. vol. 142, (1) 237-243 Jan. 1995.

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