Methods and devices to reduce defects in dielectric stack...

Details Methods and devices to reduce defects in dielectric stack... Methods and devices to reduce defects in dielectric stack...

2003-08-27

2009-10-27

Meeks, Timothy (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C427S255600, C427S331000, C427S535000, C427S540000

Reexamination Certificate

active

07608300

ABSTRACT:
A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.

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