Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-11-16
2000-09-19
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438602, 438597, 257741, 257744, 257745, H01L 2128
Patent
active
061211273
ABSTRACT:
An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
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Foresi et al., "Metal contacts of gallium nitride", Applied Physics Letters 52(22), May 31, 1993, pp. 2859-2861.
Asai Makoto
Kozawa Takahiro
Mori Tomohiko
Ohwaki Takeshi
Shibata Naoki
Everhart Caridad
Lee G.
Toyoda Gosei Co,., Ltd.
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