Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-01-25
2005-01-25
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S240000, C438S637000
Reexamination Certificate
active
06846752
ABSTRACT:
The present invention provides embodiments of methods and devices for the suppression of copper hillocks. Copper hillocks are suppressed by capping the copper layer with a dielectric film before any significant growth of copper hillocks can begin using a ramped temperature dielectric deposition process. Copper hillocks are also suppressed by doping a copper layer with a dopant that will constrain the grain size of the copper during subsequent processing. These methods are applicable to the construction of MIM capacitors and interconnect structures.
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Liu, Ruichen, et al., Single Mask Metal-Insulator-Metal (MIM) Capacitor with Copper Damascene Metallization for Sub-0.18μm Mixed Mode Signal and System-on-a-chip (SoC) Applications, Proceedings of the IEEE 2000 International Interconnect Technology Conference, Jun. 5-7, 2000, Hyatt Regency Hotel, San Francisco Airport, Burlingame, CA, pp. 111-113.
Chambers Stephen
Lavric Dan S.
Blakely , Sokoloff, Taylor & Zafman LLP
Nguyen Dao H.
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