Methods and devices for the suppression of copper hillock...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S240000, C438S637000

Reexamination Certificate

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06846752

ABSTRACT:
The present invention provides embodiments of methods and devices for the suppression of copper hillocks. Copper hillocks are suppressed by capping the copper layer with a dielectric film before any significant growth of copper hillocks can begin using a ramped temperature dielectric deposition process. Copper hillocks are also suppressed by doping a copper layer with a dopant that will constrain the grain size of the copper during subsequent processing. These methods are applicable to the construction of MIM capacitors and interconnect structures.

REFERENCES:
patent: 6225157 (2001-05-01), Thakur et al.
patent: 6300241 (2001-10-01), Moore et al.
patent: 6375746 (2002-04-01), Stevens et al.
patent: 6451664 (2002-09-01), Barth et al.
patent: 6528364 (2003-03-01), Thakur
patent: 6620740 (2003-09-01), Thakur
Armacost, M., et al., A High Reliability Metal Insulator Metal Capacitor for 0.18μm Copper Technology, International Electron Devices Meeting 2000, Dec. 10-13, 2000, San Francisco, CA, IEDM Technical Digest, pp. 157-160, Sponsored by Electronic Devices Society of IEEE.
Lin, C.C., et al., A Full Cu Damascene Metallization Process for Sub-0.18μm RF CMOS SoC High Q Inductor and MIM Capacitor Application at 2.4GHz and 5.3GHz, pp. 113-115, Interconnect Technology Conference 2001, Proceedings of the IEEE 2001.
Liu, Ruichen, et al., Single Mask Metal-Insulator-Metal (MIM) Capacitor with Copper Damascene Metallization for Sub-0.18μm Mixed Mode Signal and System-on-a-chip (SoC) Applications, Proceedings of the IEEE 2000 International Interconnect Technology Conference, Jun. 5-7, 2000, Hyatt Regency Hotel, San Francisco Airport, Burlingame, CA, pp. 111-113.

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