Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-09-19
2008-03-04
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000, C365S225700
Reexamination Certificate
active
07339843
ABSTRACT:
A method of programming addresses of failed memory locations in a memory device can be provided by generating a plurality of fail address signals corresponding to a plurality of addresses of failed memory locations in the memory device and then programming the plurality of addresses of failed memory locations to programming cells for use by a redundant circuit during read or write operations to the plurality of addresses of failed memory locations.
REFERENCES:
patent: 6829176 (2004-12-01), Callaway et al.
patent: 2002/0012282 (2002-01-01), Saito et al.
patent: 2003/0213954 (2003-11-01), Fujima
patent: 2004/0136248 (2004-07-01), Kozuka
patent: 2002042494 (2002-02-01), None
patent: 1020020058488 (2002-07-01), None
Choi Jong-hyun
Kim Nam-jong
Min Young-sun
Hoang Huan
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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