Methods and apparatuses for trench depth detection and control

Etching a substrate: processes – Nongaseous phase etching of substrate

Reexamination Certificate

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C216S088000, C356S484000, C356S496000, C356S504000, C356S626000

Reexamination Certificate

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06878301

ABSTRACT:
A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.

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patent: 5384639 (1995-01-01), Wickramasinghe
patent: 6275297 (2001-08-01), Zalicki
patent: 6650426 (2003-11-01), Zalicki

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