Etching a substrate: processes – Nongaseous phase etching of substrate
Reexamination Certificate
2005-04-12
2005-04-12
Deo, Duy-Vu N. (Department: 1765)
Etching a substrate: processes
Nongaseous phase etching of substrate
C216S088000, C356S484000, C356S496000, C356S504000, C356S626000
Reexamination Certificate
active
06878301
ABSTRACT:
A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.
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Deo Duy-Vu N.
Lam Research
Martine & Penilla & Gencarella LLP
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