Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-12-20
1999-03-16
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438738, 438742, 438952, H01L 21302
Patent
active
058830073
ABSTRACT:
Disclosed is an inventive multiple-chemistry etching method suited for etching through selected portions of layers in a layer stack in a plasma processing chamber. The layer stack preferably includes at least an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method includes a first etching step where the anti-reflective layer of the layer stack is at least partially etched with a first chemistry, the first chemistry comprising an etchant chemical and a polymer-forming chemical. Once the first etching step is complete, the method proceeds to a second etching step where at least part of the metallization layer of the layer stack is etched with a second chemistry different from the first chemistry.
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Abraham Susan C.
Goldspring Gregory J.
Alanko Anita
Breneman Bruce
Lam Research Corporation
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