Methods and apparatus for tuning a set of plasma processing...

Details Methods and apparatus for tuning a set of plasma processing... Methods and apparatus for tuning a set of plasma processing...

2006-11-21

2006-11-21

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C216S059000, C438S706000, C438S710000, C156S345230

Reexamination Certificate

active

07138067

ABSTRACT:
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

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