Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-09-27
2005-09-27
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000
Reexamination Certificate
active
06949469
ABSTRACT:
In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.
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Cheng Yu
Loewenhardt Peter K.
Phoray Vinay V.
Xiao Hanzhong
Zhu Helen
Everhart Caridad
IP Strategy Group, P.C.
Lam Research Corporation
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