Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-10-02
1998-11-03
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429819, 2042982, 20429826, C23C 1434
Patent
active
058303278
ABSTRACT:
A magnetron sputtering source for forming a sputtered film on a substrate in a magnetron sputtering apparatus includes a target having a surface from which material is sputtered and a magnet assembly that is rotatable about an axis of rotation with respect to the target. The magnet assembly produces on the target an erosion profile that is calculated to yield a desired depositional thickness distribution and inventory. A method for configuring the rotatable magnet assembly includes the steps of determining an optimal erosion profile that yields the desired depositional thickness distribution and inventory, determining a plasma track on the surface of the target that produces an acceptable approximation to the optimal erosion profile, and determining a magnet structure that produces the plasma track.
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Cole Stanley Z.
Intevac, Inc.
McClellan William R.
Nguyen Nam
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