Methods and apparatus for reducing byproduct particle generation

Details Methods and apparatus for reducing byproduct particle generation Methods and apparatus for reducing byproduct particle generation

1996-08-30

1999-06-29

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 68, 156345, 451 38, 118723I, 118723R, H05H 100

Patent

active

059164549

ABSTRACT:
A method for increasing mean time between cleans (MTBC) for a plasma processing chamber configured for running a process. The method includes specifying a minimum roughness specification for a finish of a surface of a chamber interior part configured for use within the plasma processing chamber. The minimum roughness specification is selected to promote adhesion of byproduct particles produced by the process to the surface. The method further includes specifying a maximum roughness specification for a finish of a surface of a chamber interior part. The maximum roughness specification is selected to facilitate ease of cleaning of the byproduct particles using a wet clean process. The method also includes having the chamber interior part manufactured in accordance with the minimum roughness specification and the maximum roughness specification.

REFERENCES:
patent: 5391275 (1995-02-01), Mintz
patent: 5401319 (1995-03-01), Banholzer et al.
patent: 5474649 (1995-12-01), Kava et al.
Oberg, E., Jones, F., and Horton, H. Machinery's Handbook 22nd Edition, Jun. 1987, Industrial Press, Inc. pp. 2390-2393.

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