Methods and apparatus for pre-stabilized plasma generation for m

Details Methods and apparatus for pre-stabilized plasma generation for m Methods and apparatus for pre-stabilized plasma generation for m

1996-11-13

1999-08-17

Pascal, Robert

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

134 11, 438714, 438905, B08B 600

Patent

active

059398310

ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

REFERENCES:
patent: 4576692 (1986-03-01), Fukura et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5082517 (1992-01-01), Moslehi
patent: 5266364 (1993-11-01), Tamura et al.
patent: 5273609 (1993-12-01), Moslehi
patent: 5282899 (1994-02-01), Balmashnov et al.
patent: 5403434 (1995-04-01), Moslehi
patent: 5468686 (1995-11-01), Kawamoto
patent: 5578163 (1996-11-01), Yachi

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