Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2008-01-29
2008-01-29
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S059000, C438S014000, C438S016000
Reexamination Certificate
active
10951553
ABSTRACT:
A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
REFERENCES:
patent: 4478678 (1984-10-01), Watanabe
patent: 5427827 (1995-06-01), Shing et al.
patent: 5557215 (1996-09-01), Saeki et al.
patent: 5699223 (1997-12-01), Mashiro et al.
patent: 5863376 (1999-01-01), Wicker et al.
patent: 6063234 (2000-05-01), Chen et al.
patent: 6123775 (2000-09-01), Hao et al.
patent: 6197116 (2001-03-01), Kosugi
patent: 6302966 (2001-10-01), Bailey, III et al.
patent: 6361645 (2002-03-01), Schoepp et al.
patent: 6372523 (2002-04-01), Suzawa et al.
patent: 2003/0150562 (2003-08-01), Quon
patent: 2005/0230049 (2005-10-01), Nishio et al.
patent: 2006/0065631 (2006-03-01), Cheng et al.
patent: 2006/0065632 (2006-03-01), Cheng et al.
International (PCT) Search Report, mailed Oct. 20, 2006, regarding PCT/US2005/34227.
Written Opinion mailed Oct. 20, 2006 regarding PCT/US2005/34227.
“Thermal Mass,” A Powerpoint presentation, 21 pages, no date provided.
“Frequency Scanning V/I Probe: Models VI-Probe-4100 And VI-Probe-350 RF Impedance Analyzer,” pp. 1-4, 2003 MKS Instruments, Inc., Bulletin V/I Probe-4/03, www.mksinst.com.
Commenant et al. “Faraday Shield Disposed within an Inductively Coupled Plasma Etching Apparatus,” pp. 1-55, no date provided.
“Chapter 2 : Statistical Process Control,” pp. 13-34, no date provided.
Hung et al. “The More and Less of Effective Overlay Control,” Summer 2003, Yield Management Solutions, pp. 59-64.
“SEMI Draft Doc.#3814: New Standards: Safety Guideline for FPD Manufacturing System,” Apr. 2, 2004, SEMI International Standards, pp. 1-47.
“O: RC & RL Frequency Response,” pp. 0-1-0.17, no date provided.
Amorese, Greg, “LCR/Impedance Measurement Basics,” Hewlett-Packard Company 1997, 1997 Back to Basics Seminar, 81 pages.
El-Hag, Ayman H., “Lecture Notes: ME 269—Single Phase Circuit,” Dec. 16, 2003, 19 pages.
Hirscher, Hans, “Electrostatic Chuck to Boost Your Yield,” Silicon Front End, pp. 39-43, no date provided.
U.S. Appl. No. 10/951,548, filed Sep. 27, 2004, Cheng et al.
U.S. Appl. No. 10/952,562, filed Sep. 27, 2004, Cheng et al.
IPRP (Int'l Preliminary Report on Patentability) mailed Apr. 5, 2007 re PCT/US2005/034227.
Annapragada Rao
Cheng Chia Cheng
Deshmukh Subhash
Guiney Timothy J.
Ahmed Shamim
IP Strategy Group, P.C.
Lam Research Corporation
LandOfFree
Methods and apparatus for monitoring a process in a plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatus for monitoring a process in a plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for monitoring a process in a plasma... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3925335