Methods and apparatus for incorporating nitrogen in oxide films

Details Methods and apparatus for incorporating nitrogen in oxide films Methods and apparatus for incorporating nitrogen in oxide films

2011-03-29

2011-03-29

Estrada, Michelle (Department: 2823)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230ER, C029S025010, C257SE21311

Reexamination Certificate

active

07913645

ABSTRACT:
In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

REFERENCES:
patent: 6068729 (2000-05-01), Shrotriya
patent: 6432255 (2002-08-01), Sun et al.
patent: 6626188 (2003-09-01), Fitzsimmons et al.
patent: 2002/0006736 (2002-01-01), Moore
patent: 2002/0110700 (2002-08-01), Hein et al.
patent: 2002/0168847 (2002-11-01), Narwankar et al.
patent: 2003/0066487 (2003-04-01), Suzuki
patent: 2005/0196954 (2005-09-01), Noguchi
patent: 2007/0111458 (2007-05-01), Sato et al.
patent: WO 99/03312 (1999-01-01), None
patent: WO 00/22664 (2000-04-01), None
patent: WO 2006/130838 (2006-07-01), None
International Search Report and Written Opinion of International Application No. PCT/US2006/021498 mailed on Jan. 22, 2007.
International Preliminary Report on Patentability of International Application No. PCT/US2006/021498 mailed on Dec. 21, 2007.
Office Action for South Korean Patent Application No. 10-2007-7030121 dated Aug. 14, 2009.
Office Action of U.S. Appl. No. 11/446,444 Mailed Jun. 25, 2009.
Sep. 25, 2009 Response to Office Action of U.S. Appl. No. 11/446,444 Mailed Jun. 25, 2009.
Mar. 16, 2010 Response to Office Action of U.S. Appl. No. 11/446,444 Mailed Dec. 16, 2009.
Office Action of U.S. Appl. No. 11/446,444 Mailed Dec. 16, 2009.
Office Action of U.S. Appl. No. 11/446,444 Mailed May 17, 2010.
Interview Summary of U.S. Appl. No. 11/446,444, filed Jul. 20, 2010.
Interview Summary of U.S. Appl. No. 11/446,444, filed Jul. 20, 2009.
Interview Summary of U.S. Appl. No. 11/446,444, filed Mar. 16, 2010.
Aug. 17, 2010 Response to Office Action of U.S. Appl. No. 11/446,444 Mailed May 17, 2010.
Notice of Allowance of U.S. Application No. 11/446,444 Mailed Oct. 27, 2010.

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