Methods and apparatus for detecting removal of thin film layers

Optics: measuring and testing – By configuration comparison – With photosensitive film or plate

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451 6, 25055927, G01B 1106, B24B 4912

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active

058726330

ABSTRACT:
The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable. The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter which analyzes the reflected light. An output signal from the photospectrum meter is transmitted to a processor which includes a smart algorithm configured to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

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Patent Abstracts Of Japan, vol. 097, No. 010, Oct. 31, 1997 & JP 09 159409 (Dainippon Screen Mfg. Co., Ltd.), Jun. 20, 1997 --see abstract.

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