Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-06-23
2010-02-02
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S488000, C438S502000
Reexamination Certificate
active
07655542
ABSTRACT:
Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
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Office Action. U.S. Appl. No. 11/876,173. Dated Feb. 20, 2009.
Chae Yong Kee
Choi Soo Young
Takehara Takako
White John M.
Applied Materials Inc.
Dang Phuc T
Patterson & Sheridan
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