Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1997-08-22
1999-11-16
Breneman, Bruce
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
216 67, 438905, 156345, C23F 100
Patent
active
059839066
ABSTRACT:
The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
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Chang Mei
Jin Xiao Liang
Luo Lee
Sajoto Talex
Smith Paul Frederick
Applied Materials Inc.
Breneman Bruce
Olsen Allan
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