Methodology for repeatable post etch CD in a production tool

Details Methodology for repeatable post etch CD in a production tool Methodology for repeatable post etch CD in a production tool

2005-02-22

2005-02-22

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S313000, C438S007000, C438S008000, C438S016000, C356S625000, C356S636000, C156S345240, C355S040000, C355S055000

Reexamination Certificate

active

06858361

ABSTRACT:
A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile to adjust the next process the inspected wafer will undergo (e.g., a photoresist trim process). After the processing step, dimensions of a structure formed by the process, such as the CD of a gate formed by the process, are measured, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. By taking into account photoresist CD and profile variation when choosing a resist trim recipe, post-etch CD is decoupled from pre-etch CD and profile. With automatic compensation for pre-etch CD, a very tight distribution of post-etch CD is achieved. In certain embodiments, the CD and profile measurements, trim, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.

REFERENCES:
patent: 4447731 (1984-05-01), Kuni et al.
patent: 4911103 (1990-03-01), Davis et al.
patent: 5109430 (1992-04-01), Nishihara et al.
patent: 5171393 (1992-12-01), Moffat
patent: 5452521 (1995-09-01), Niewmierzycki
patent: 5653894 (1997-08-01), Ibbotsen et al.
patent: 5913102 (1999-06-01), Yang
patent: 5926690 (1999-07-01), Toprac et al.
patent: 5944940 (1999-08-01), Toshima
patent: 5948203 (1999-09-01), Wang
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5980766 (1999-11-01), Flamm et al.
patent: 6001699 (1999-12-01), Nguyen et al.
patent: 6004706 (1999-12-01), Ausschnitt et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6027842 (2000-02-01), Ausschnitt et al.
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6054710 (2000-04-01), Bruggeman
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6148239 (2000-11-01), Funk et al.
patent: 6161054 (2000-12-01), Rosenthal et al.
patent: 6175417 (2001-01-01), Do et al.
patent: 6178239 (2001-01-01), Kishinsky et al.
patent: 6225639 (2001-05-01), Adams
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6424417 (2002-07-01), Cohen et al.
patent: 20020155629 (2002-10-01), Fairbairn et al.
patent: 20020171828 (2002-11-01), Cohen et al.
patent: 0 727 715 (1996-08-01), None
patent: 1 079 428 (2001-02-01), None
patent: 1 083 424 (2001-03-01), None
patent: 61 290312 (1986-12-01), None
patent: WO 0184382 (2001-11-01), None
patent: WO 0209170 (2002-01-01), None
US 6,150,664, 11/2000, Su (withdrawn)
“Integrated CD Metrolog for Poly Si Etching”, G.P. Kota et al., Lam Research Corporation, Plasma Etch Users Group Meeting, Jan. 17, 2002.
Davidson et al., “An Inverse Scattering Approach to SEM Line Width Measurements”, Technical Program and Abstract Digest, SPIE's 24th International Symposium on Microlithography, Mar. 1999, Santa Clara, CA.
Anthony J. Toprac, “AMD's Advanced Process Control of Poly-gate Critical Dimension”, SPIE Conference on Process, Equipment and Materials Control in Integrated Circuit Manufacturing, Sep. 1999, Santa Clara, CA, SPIE vol. 3882.
Lee, M.E., et al., “Analysis of Reflectometry and Ellipsometry Data from Patterned Structures”,Characterization and Metrology for ULSI Technology: 1998 International Conference, ed. D.G. Seiler, et al., 1998, pp. 331-335.
McIntosh, J.M., et al., “Approach to CD SEM Metrology Utilizing the Full Waveform Signal”, Proceedings of the SPIE, vol. 3332, pp. 51-60, Feb. 23, 1998.
Ausschnit, Christopher P., et al., “Seeing the Forest for the Trees: A New Approach to CD Control,” Ed. Bhanwar Singh,Proceedings of the SPIE, vol. 3332, pp. 212-220, Feb. 23-25, 1998.
Moharam, M.G., et al., “Stable Implementation of the Rigorous Coupled-Wave Analysis for Surface-Relief Gratings: Enhanced Transmittance Matrix Approach,” Journal of the Optical Society of America, vol. 12, No. 5, pp. 1077-1086, May 1995.
Chateau, Nicolas, “Algorithm for the Rigorous Coupled-Wave Analysis of Grating Diffusion,” Journal of the Optical Society of America, vol. 11, No. 4, pp. 1321-1331, Apr. 1994.
European Search Report dated Mar. 30, 2001.
Raymond, Christopher J., “Angle-Resolved Scatterometry for Semiconductor Manufacturing”, Microlithography World, Winter 2000, pp. 18-23.

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