Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-06-27
2006-06-27
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S009000, C438S706000, C438S712000, C134S001100
Reexamination Certificate
active
07067432
ABSTRACT:
A new methodology of monitoring process drift and chamber seasoning is presented based on the discovery of the strong correlation between chamber surface condition and free radical density in a plasma. Lower free radical density indicates either there is a significant process drift in the case of production wafer etching or that the chamber needs more seasoning before resuming production wafer etching. Free radical density in the plasma is monitored through measuring the emission intensities of free radicals in the plasma by an optical spectrometer. A timely detection of the extent of process drift and chamber seasoning can help to minimize the chamber downtime and improve its throughput significantly. Such method can also be implemented in existing production wafer etching or chamber seasoning practices in an in-situ, real-time, and non-intrusive manner.
REFERENCES:
patent: 5756400 (1998-05-01), Ye et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5879575 (1999-03-01), Tepman et al.
patent: 6124927 (2000-09-01), Zhong et al.
patent: 6143144 (2000-11-01), Golovato et al.
patent: 6274500 (2001-08-01), Xuechun et al.
patent: 6379575 (2002-04-01), Yin et al.
patent: 6797634 (2004-09-01), Suzuki
Songlin Xu et al., “Wall-dependent etching characteristics of organic antireflection coating in O2+halogen/hydrogen halide plasma”, J. Vac Sci. Technol. A 19(6), Nov./Dec. 2001.
Songin Xu et al., “Gate Oxide Integrity Issue Cause by Wall-Related Process Drivt in Plasma Etching”, 2002 7thInternational Symposium on Plasma-and Process-Induced Damage Jun. 6-7, Maui HI, USA.
Songlin Xu et al., “Characteristics and mechanism of etch process sensitivity to chamber surface condition”, J. Vac. Sci. Technol. B19(1), Jan./Feb. 2001.
Lill Thorsten
Xu Songlin
Applied Materials Inc.
Patterson & Sheridan LLP
Vinh Lan
LandOfFree
Methodology for in-situ and real-time chamber condition... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methodology for in-situ and real-time chamber condition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methodology for in-situ and real-time chamber condition... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3660174