Methodology and apparatus for leakage detection

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

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C250S307000, C324S754120

Reexamination Certificate

active

11025197

ABSTRACT:
A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.

REFERENCES:
patent: 5097204 (1992-03-01), Yoshizawa et al.
patent: 5612626 (1997-03-01), Golladay
patent: 06-326165 (1994-11-01), None

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