Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1987-05-15
1993-06-01
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430167, 430194, 430197, 430270, 430298, 430311, 430312, 430313, 430314, 430315, 430324, 430325, 430326, 430327, 156628, 156643, G03F 736, G03F 7008
Patent
active
052158675
ABSTRACT:
A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.
REFERENCES:
patent: 3816196 (1974-06-01), La Combe
patent: 3816198 (1974-06-01), La Combe et al.
patent: 3977954 (1976-08-01), Needles et al.
patent: 4195108 (1980-03-01), Gazard et al.
patent: 4232110 (1980-11-01), Taylor
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4259435 (1981-03-01), Broer et al.
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4396704 (1983-08-01), Taylor
patent: 4426247 (1984-01-01), Tamamura et al.
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4810601 (1989-03-01), Allen et al.
patent: 4908298 (1990-03-01), Hefferon et al.
"Polarity Reversal of PMMA By Treatment With Chlorosilanes", Extended Abstracts, D. Follett et al., Oct. 17-21, 1982, pp. 311-328.
"A breakthrough to the plasma deposited dry-developable e-beam resist", Technical Papers, Shuzo Hattori et al., Nov. 8-10, 1982, pp. 311-328.
"Multilayer Resist Systems and Processing", Solid State State Technology, T. J. Watson, May 1983, pp. 105-112.
"The Status of Dry-Developed Resists for Each Lithographic Technology", VLSI Electronic:Microstructure Science, vol. 8 Taylor et al., 1983, pp. 217-253.
"Session GJ: Superconducting Microbridges and Proximity Effects", Bulletin of the American Physical Society, vol. 23, No. 3, Mar. 1978, Published for the American Physical Society by the American Institute of Physics, p. 357.
"Laser Direct-Write Processing", Lincoln Laboratory, Massachusetts Institute of Technology Abstract, 1983, May 31-Jun. 3, 1983, 1981 Int'l Symposium on Electron, Ion & Photo Beams.
"Dry Developed Resists For Each Lithographis Tech.", Microcircuit Engineering 81, Taylor et al., Sep. 28-30, 1981, pp. 381-385.
"Dry Developed Resist-An Overview and Discussion of Recent Results", 1982 International Conference & Seminar Proceedings, Advanced Plasma Technology, Taylor et al., Jan. 26-28, 1982, pp. 44-54.
Stillwagon Larry E.
Taylor Gary N.
Venkatesan Thirumalai N. C.
Wolf Thomas M.
AT&T Bell Laboratories
Bowers Jr. Charles L.
Fox James H.
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