Method to suppress boron penetration in P+ mosfets

Details Method to suppress boron penetration in P+ mosfets Method to suppress boron penetration in P+ mosfets

1998-08-13

2000-08-15

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438532, H01L 21336

Patent

active

061035823

ABSTRACT:
With the growing practice of doping gates for MOSFETs with boron, problems have been encountered due to later diffusion of the boron into the active region. To block this, argon ions are implanted into the gate pedestal material prior to doping it with boron. The damage caused by the argon ions results in traps that getter the boron atoms, behaving in effect as a diffusion barrier. The invention is directed specifically to gate pedestals that are less than about 3000 Angstroms thick. Under these conditions it has been determined that the implantation energies of the argon ions should not exceed 80 keV. It is also important that the dosage of argon be in the range from 1.times.10.sup.15 to 1.times.10.sup.16 per cm.sup.2. Preferably doses in excess of 5.times.10.sup.15 should be used as they also lead to improvements in subthreshold swing and hot carrier immunity.

REFERENCES:
patent: 5393676 (1995-02-01), Anjum et al.
patent: 5468974 (1995-11-01), Aronowitz et al.
patent: 5518943 (1996-05-01), Tsunoda
patent: 5576228 (1996-11-01), Chen et al.
patent: 5605848 (1997-02-01), Ngaoaram

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