Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-18
2010-02-09
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21320
Reexamination Certificate
active
07659156
ABSTRACT:
A semiconductor device is provided which comprises a semiconductor layer (109), a dielectric layer (111), first and second gate electrodes (129, 131) having first and second respective work functions associated therewith, and a layer of hafnium oxide (113) disposed between said dielectric layer and said first and second gate electrodes.
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Rossow Marc
Spencer Gregory S.
Stephens Tab A.
Thean Voon-Yew
Triyoso Dina H.
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Le Thao P.
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