Method to selectively identify at risk die based on location...

Details Method to selectively identify at risk die based on location... Method to selectively identify at risk die based on location...

2007-12-04

2007-12-04

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

10996074

ABSTRACT:
A method and system of selectively identifying at risk die based on location within the reticle. Reticle and stepping information is stored in a database. All reticle shots in a wafer and in a lot are overlaid on top of each other. The reticle and stepping information is used to calculate pass/fail or specific bin yield of reticle fields. It is determined if the yield of some reticle locations is below a statistical measure by a pre-determined threshold, and if so, all the die in that location are downgraded. The statistical value to compare against does not have to be based on the reticle alone. It can be a wafer of lot level statistic. The process can be applied at a lot or wafer level, or both.

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