Method to reduce photoresist pattern collapse by controlled...

Details Method to reduce photoresist pattern collapse by controlled... Method to reduce photoresist pattern collapse by controlled...

2007-06-12

2007-06-12

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S637000, C438S780000

Reexamination Certificate

active

10709406

ABSTRACT:
A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.

REFERENCES:
patent: 6365968 (2002-04-01), Qian et al.
patent: 2003/0015342 (2003-01-01), Sakamoto et al.
S. Lee et al. “New Approach for Pattern Collapse Problem by Increasing Contact Area at Sub-100nm Patterning,” Proc. SPIE—The International Society for Optical Engineering, Jun. 2003, pp. 166-174 (vol. 5039).

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